Testing of semiconductor materials; measurement of the resistivity of silicon or germanium single crystals by means of the four probe/direct current method with collinear array— 5 стр.
Testing of semi-conducting inorganic materials; measurement of the electrical resistivity of silicon or germanium single crystals in bars by means of the two-point-probe direct current method— 4 стр.
Testing of semi-conducting inorganic materials; measurement of the electrical resistivity of silicon or germanium single crystals by means of the four-point-probe direct current method with collinear four probe array— 5 стр.
Testing of semiconductor materials; determination of the radial resistivity variation of silicon or germanium slices by means of the four-probe/direct current method— 3 стр.
Testing of materials for use in semiconductor technology; determination of interstitial atomic boron and phosphorus content of silicon by infrared absorption spectroscopy— 4 стр.
Testing of materials for semiconductor technology; contactless determination of the electrical resistivity of semiconductor slices with the eddy current method; homogeneously doped semiconductor wafers— 4 стр.
Testing of semiconductive inorganic materials; determination of the radial resistivity variation of silicon or germanium slices, by means of a four-point-DC-probe— 3 стр.
Testing of semi-conducting inorganic materials; measurement of the electrical resistivity of silicon or germanium single crystals in bars by means of the two-point-probe direct current method— 4 стр.
Testing of semi-conducting inorganic materials; measurement of the electrical resistivity of silicon or germanium single crystals by means of the four-point-probe direct current method with collinear four probe array— 5 стр.
