Testing of materials for use in semiconductor technology; detection of crystal defects and inhomogeneities in silicon single crystals by X-ray topography— 10 стр.
Testing of materials for semiconductor technology; recognition of defects and inhomogeneities in semiconductor single crystals by X-ray topography; III-V-semiconductor compounds— 7 стр.
Testing of materials for semiconductor technology - Determination of the dislocation etch pits density in monocrystals of III-V-compound semiconductors - Part 2: Indium phosphide— 2 стр.
Testing of materials for semiconductor technology; detection of crystal defects in monocrystalline silicon using etching techniques on {111} and {100} surfaces— 9 стр.
Testing of materials for semiconductor technology; determination of the dislocations etch pits density in monocrystals of III-V-compound semiconductors; galliumarsenide— 4 стр.
Testing of materials for semiconductor technology - Determination of the dislocation etch pits density in monocrystals of III-V-compound semiconductors - Part 3: Gallium phosphide— 2 стр.
Testing of materials for semiconductor technology - Determination of dislocations in monocrystals of III-V-compound semi-conductors - Part 1: Gallium arsenide— 9 стр.
